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ABET Course Objectives and Outcomes Form

Course number and title: EE121B Principles of Semiconductor Device Design
Credits: 4
Instructor(s)-in-charge: C. O. Chui (chui@ee.ucla.edu)
  J. Woo (woo@ee.ucla.edu)
Course type: Lecture
Required or Elective: Required.
Course Schedule:
Lecture: 3 hrs/week. Meets twice weekly.
Dicussion: 1 hr/discussion section. Multiple discussion sections offered per quarter.
Outside Study: 9 hrs/week.
Office Hours: 2 hrs/week by instructor. 2 hrs/week by each teaching assistant.
 
Course Assessment:
Homework: 6 homework assignments
Exams: 1 midterm and 1 final examination.
 
Grading Policy: Typically, 20% homework, 30% midterm, 50% final.
Course Prerequisites: EE2.
Catalog Description: Introduction to principles of operation of bipolar and MOS transistors, equivalent circuits, high-frequency behavior, voltage limitations.  
Textbook and any related course material:
¤ C. R. Viswanathan, Lecture Notes on Basic semiconductor devices, available from course reader materials.
 
Course Website
Additional Course Website
Topics covered in the course and level of coverage:
¤ Bipolar Transistor Structures 1.5 hrs.
¤ DC characteristics of Bipolar transistors 3 hrs.
¤ Amplification in Bipolar transistors 3 hrs.
¤ AC characteristics of Bipolar transistors 3 hrs.
¤ Switching characteristics of Bipolar transistors 3 hrs.
¤ Bipolar transistor circuit models 1.5 hrs.
¤ MOS Structures 1.5 hrs.
¤ MOS capacitor 4.5 hrs.
¤ MOSFET DC and AC behavior 6 hrs.
¤ MOSFET models 1.5 hrs.
Course objectives and their relation to the Program Educational Objectives:  
Contribution of the course to the Professional Component:
Engineering Topics: 0 %
General Education: 0 %
Mathematics & Basic Sciences: 0 %
Expected level of proficiency from students entering the course:
Mathematics: Strong
Physics: Not Applicable
Chemistry: Not Applicable
Technical writing: Some
Computer Programming: Some
Material available to students and department at end of course:
  Available to
students
Available to
department
Available to
instructor
Available to
TA(s)
Course Objectives and Outcomes Form: X X X X
Lecture notes, homework assignments, and solutions: X
Samples of homework solutions from 2 students: X
Samples of exam solutions from 2 students: X
Course performance form from student surveys: X X
Will this course involve computer assignments? NO Will this course have TA(s) when it is offered? YES

  Level of contribution of course to Program Outcomes
(a) Strong  
(e) Some  
(i) Average  
(j) Some  
(k) Some  
(m) Some  
Strong: (a)
Average: (i)
Some: (e) (j) (k) (m)

:: Upon completion of this course, students will have had an opportunity to learn about the following ::
  Specific Course Outcomes Program Outcomes
1. Understand the basic structures of BJT. a
2. Understand the basic operation of BJT. a
3. Applications of BJT models for transistor analysis. a e k
4. Understand the MOS capacitor structures and basic principles. a
5. Understand the MOS capacitor C-V characteristics. a
6. Applications of MOS capacitor in circuits. a e k
7. Understand the MOS transistor structures and basic principles. a
8. Basic operation MOSFETs and its IV characteristics. a
9. MOSFET�s models and their applications to circuits. a e k
10. Non-ideal effects in MOSFETs and advanced MOSFET structures. a j
11. Several homework assignments delving on core concepts and reinforcing analytical skills learned in class. a i m
12. Opportunities to interact weekly with the instructor and the teaching assistant(s) during regular office hours and discussion sections in order to further the students' learning experience and the students' interest in the material. i

  Program outcomes and how they are covered by the specific course outcomes
(a) ¤  Understand the basic structures of BJT.  
¤  Understand the basic operation of BJT.  
¤  Applications of BJT models for transistor analysis.  
¤  Understand the MOS capacitor structures and basic principles.  
¤  Understand the MOS capacitor C-V characteristics.  
¤  Applications of MOS capacitor in circuits.  
¤  Understand the MOS transistor structures and basic principles.  
¤  Basic operation MOSFETs and its IV characteristics.  
¤  MOSFET�s models and their applications to circuits.  
¤  Non-ideal effects in MOSFETs and advanced MOSFET structures.  
¤  Several homework assignments delving on core concepts and reinforcing analytical skills learned in class.  
(e) ¤  Applications of BJT models for transistor analysis.  
¤  Applications of MOS capacitor in circuits.  
¤  MOSFET�s models and their applications to circuits.  
(i) ¤  Several homework assignments delving on core concepts and reinforcing analytical skills learned in class.  
¤  Opportunities to interact weekly with the instructor and the teaching assistant(s) during regular office hours and discussion sections in order to further the students' learning experience and the students' interest in the material.  
(j) ¤  Non-ideal effects in MOSFETs and advanced MOSFET structures.  
(k) ¤  Applications of BJT models for transistor analysis.  
¤  Applications of MOS capacitor in circuits.  
¤  MOSFET�s models and their applications to circuits.  
(m) ¤  Several homework assignments delving on core concepts and reinforcing analytical skills learned in class.  

:: Last modified: February 2013 by J. Lin ::

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