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ABET Course Objectives and Outcomes Form

Course number and title: EE163B Microwave and Millimeter Wave Active Devices
Credits: 4
Instructor(s)-in-charge: Not offered 2011-12
Course type: Lecture
Required or Elective: A pathway course.
Course Schedule:
Lecture: 3 hrs/week. Meets twice weekly.
Dicussion: 1 hr/week.
Outside Study: 8 hrs/week.
Office Hours: 2 hrs/week by instructor. 2 hrs/week by TA.
 
Course Assessment:
Homework: 7 assignments.
Exams: 1 midterm and 1 final examination.
 
Grading Policy: Typically, 25% homework, 30% midterm, 45% final.
Course Prerequisites: EE121B.
Catalog Description: MESFET, HEMT, HBT, IMPATT, Gunn, small signal models, noise model, large signal model, loadpull method, parameter extraction technique.  
Textbook and any related course material:
¤ �High-Speed Semiconductor Devices�, edited by Simon Sze, Wiley Inter-Science.
¤ �Fundamentals of III-V Devices�, by Willium Liu, Wiley Inter-Science.
 
Course Website
Topics covered in the course and level of coverage:
¤ Technology comparisons for microwave semiconductor devices. 3 hrs.
¤ DC characteristics and modeling of BJT and FET. 3 hrs.
¤ High frequency characteristics and modeling of BJT and HBT. 3 hrs.
¤ High frequency characteristics and modeling of HEMT and MOS. 3 hrs.
¤ Linearity. 3 hrs.
¤ Noise. 2 hrs.
¤ Thermal resistance and long-term reliability. 1.5 hrs.
¤ Load-pull and S-parameters extraction for device modeling. 2 hrs.
¤ Impact of device scaling on RF CMOS. 2 hrs.
¤ Transceiver Application examples. 2 hrs.
Course objectives and their relation to the Program Educational Objectives:  
Contribution of the course to the Professional Component:
Engineering Topics: 0 %
General Education: 0 %
Mathematics & Basic Sciences: 0 %
Expected level of proficiency from students entering the course:
Mathematics: Average
Physics: Strong
Chemistry: Some
Technical writing: Some
Computer Programming: Some
Material available to students and department at end of course:
  Available to
students
Available to
department
Available to
instructor
Available to
TA(s)
Course Objectives and Outcomes Form: X X X X
Lecture notes, homework assignments, and solutions: X X X X
Samples of homework solutions from 2 students: X
Samples of exam solutions from 2 students: X
Course performance form from student surveys: X X
Will this course involve computer assignments? NO Will this course have TA(s) when it is offered? NO

  Level of contribution of course to Program Outcomes
(a) Strong  
(b) Strong  
(c) Strong  
(d) Average  
(e) Strong  
(f) Strong  
(g) Strong  
(h) Average  
(i) Average  
(j) Strong  
(k) Strong  
(m) Strong  
Strong: (a) (b) (c) (e) (f) (g) (j) (k) (m)
Average: (d) (h) (i)

:: Upon completion of this course, students will have had an opportunity to learn about the following ::
  Specific Course Outcomes Program Outcomes
1. Know uniqueness and trade-offs in using microwave semiconductor devices. c e j
2. Know how to solve complex device equations at microwave frequencies. a m
3. Know critical device parameters for microwave operations. a b c d e g
4. Know how to optimize microwave device structure. c e j
5. Familiar with small-signal s-parameter characterization method. b k
6. Familiar with load-pull method for large-signal device characterization. b k
7. Know how to calculate device thermal impedance. a c
8. Know how to estimate device life time and understand device failure mechanism. a c f
9. Understand device scaling impact on RF CMOS. b c j
10. Familiar with device applications in modern transceiver systems. c j
11. Homework assignments delving on core concepts and reinforcing analytical skills learned in class. a h i m
12. Opportunities to interact weekly with the instructor and the teaching assistant(s) during office hours and discussion sections in order to further their learning experience and their interest in the material. i

  Program outcomes and how they are covered by the specific course outcomes
(a) ¤  Know how to solve complex device equations at microwave frequencies.  
¤  Know critical device parameters for microwave operations.  
¤  Know how to calculate device thermal impedance.  
¤  Know how to estimate device life time and understand device failure mechanism.  
¤  Homework assignments delving on core concepts and reinforcing analytical skills learned in class.  
(b) ¤  Know critical device parameters for microwave operations.  
¤  Familiar with small-signal s-parameter characterization method.  
¤  Familiar with load-pull method for large-signal device characterization.  
¤  Understand device scaling impact on RF CMOS.  
(c) ¤  Know uniqueness and trade-offs in using microwave semiconductor devices.  
¤  Know critical device parameters for microwave operations.  
¤  Know how to optimize microwave device structure.  
¤  Know how to calculate device thermal impedance.  
¤  Know how to estimate device life time and understand device failure mechanism.  
¤  Understand device scaling impact on RF CMOS.  
¤  Familiar with device applications in modern transceiver systems.  
(d) ¤  Know critical device parameters for microwave operations.  
(e) ¤  Know uniqueness and trade-offs in using microwave semiconductor devices.  
¤  Know critical device parameters for microwave operations.  
¤  Know how to optimize microwave device structure.  
(f) ¤  Know how to estimate device life time and understand device failure mechanism.  
(g) ¤  Know critical device parameters for microwave operations.  
(h) ¤  Homework assignments delving on core concepts and reinforcing analytical skills learned in class.  
(i) ¤  Homework assignments delving on core concepts and reinforcing analytical skills learned in class.  
¤  Opportunities to interact weekly with the instructor and the teaching assistant(s) during office hours and discussion sections in order to further their learning experience and their interest in the material.  
(j) ¤  Know uniqueness and trade-offs in using microwave semiconductor devices.  
¤  Know how to optimize microwave device structure.  
¤  Understand device scaling impact on RF CMOS.  
¤  Familiar with device applications in modern transceiver systems.  
(k) ¤  Familiar with small-signal s-parameter characterization method.  
¤  Familiar with load-pull method for large-signal device characterization.  
(m) ¤  Know how to solve complex device equations at microwave frequencies.  
¤  Homework assignments delving on core concepts and reinforcing analytical skills learned in class.  

:: Last modified: February 2013 by J. Lin ::

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